Process for the selective production of carbon nanotubes and hidrofu00eclicos semiconductor with a high density of structural defects, carbon nanotubes and hidrofu00eclicos semiconductor and process for making semiconductor and / or hidrofu00eclica the superfu00eccie carbon, carbonaceous materials and any A substrate.

摘要

Process for the selective obtained carbon nanotube and hidrofu00eclicos semiconductor with a high density of structural defects, carbon nanotubes and hidrofu00eclicos semiconductor and process for making semiconductor and / or hidrofu00eclica the superfu00eccie of carbons.Materials carbonaceos and any substrate, the present invention relates to a process for obtaining selective and direct carbon nanotube semiconductor and hidrofilicos in powder form or on substrates without the need for additional steps to funcionalizau00e7u00e3o, which have On its surface with a high density of structural defects and nitrogen, oxygen,Hydrogen in its composition.More specifically, the present invention relates to a process for the manufacture of selective carbon nanotube semiconductor and hidrofilicos which comprises the submission of a substrate, previously impregnated with a catalyst, the chemical vapor deposition (CVD) with an atmosphere D. And methanol and gaseous nitrogen at a temperature of degradation of methanol, ie above 6500c.In addition, the present invention relates to a process for making the surface carbon and carbonaceous materials and a number of other semiconductor substrates and / or hidrofilicos using carbon nanotubes which are not subjected to chemical processes funcionaliz action.