SEMICONDUCTOR DEVICE HAVING THE SILICON PENETRATING VIA STRUCTURE, CAPABLE OF OBTAINING THE VOLTAGE MARGIN AND THE TIMING MARGIN

摘要

PURPOSE: A semiconductor device having the silicon penetrating via structure is provided to alleviate the capacitive effect of TSV structure by using the ohmic contact.;CONSTITUTION: A chip penetrating via(TSV) is inserted into the semiconductor wafer. An insulation layer is arranged around the chip penetration via to separate the semiconductor wafer and the chip penetration via. The ohmic contact layer is arranged in order to surround the chip penetration via on the surface part of the semiconductor wafer. The connection wiring electrically connects the chip penetration via and the ohmic contact layer.;COPYRIGHT KIPO 2011