A process for the preparation of a transistor component to preserve the integrity of a gate stack with a large ε through a displacement distance holder which, for determining a distance of a deformation induzier ends semiconductor alloy is used, and transistor device

摘要

A method with:Forming a first said spacing holder member on at least one part of the side walls of a gate stack, which is formed on a semiconductor layer and a gate insulation film with a dielectric material with a large ε, a gate electrodes material and a on the gate electrodes cover layer material has;Forming a semiconductor alloy in the semiconductor layer with the lateral distance to the gate stack on the basis of the first said spacing holder member;Forming a second said spacing holder member on the first spacer element; removing the cover layer selectively to the second spacer element and the semiconductor alloy; andForm of drain - and source regions in at least a portion of the semiconductor alloy on the basis of the first said spacing holder member.