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METHOD FOR MEASURING ABSOLUTE VALUE OF ELECTRIC FIELD ENHANCEMENT DEGREE, DEVICE FOR MEASURING ABSOLUTE VALUE OF ELECTRIC FIELD ENHANCEMENT DEGREE, METHOD FOR EVALUATING MEASUREMENT MEMBER, DEVICE FOR EVALUATING MEASUREMENT MEMBER, METHOD FOR DETECTING ANALYTE AND DEVICE FOR DETECTING ANALYTE
METHOD FOR MEASURING ABSOLUTE VALUE OF ELECTRIC FIELD ENHANCEMENT DEGREE, DEVICE FOR MEASURING ABSOLUTE VALUE OF ELECTRIC FIELD ENHANCEMENT DEGREE, METHOD FOR EVALUATING MEASUREMENT MEMBER, DEVICE FOR EVALUATING MEASUREMENT MEMBER, METHOD FOR DETECTING ANALYTE AND DEVICE FOR DETECTING ANALYTE
PROBLEM TO BE SOLVED: To provide a method and device capable of measuring an electric field enhancement degree on a plane (in a plane direction) of a metallic thin film of a real target of measurement, and also obtaining three dimensional distribution of electric field enhancement degrees corresponding to thickness of the metallic thin film and a height position of an analyte captured in a vicinity of the metallic thin film so as to measure (or estimate) an accurate electric field enhancement degree.;SOLUTION: In the method and device, a first excitation light is irradiated from a light source to generate a surface plasmon light on a surface of a metallic thin film, and through a dielectric member, a second excitation light which is different from the first excitation light is irradiated toward the metallic thin film to generate a propagation light on the surface of the metallic thin film, so that an interference pattern is formed by the surface plasmon light and the propagation light, and while changing a light volume of the second excitation light, based on the light volume of the second excitation light when contrast of the interference pattern becomes strongest, an electric field enhancement degree at a predetermined height position of an electric field enhancement degree measurement member is converted for estimation.;COPYRIGHT: (C)2012,JPO&INPIT
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