首页> 外国专利> MASKLESS LITHOGRAPHY APPARATUS FOR DETERMINING THE START POSITION AND POSTURE OF COMPENSATED LITHOGRAPHY AND A METHOD FOR DETERMINING A LITHOGRAPHY START POSITION AND A POSTURE IN MASKLESS LITHOGRAPHY

MASKLESS LITHOGRAPHY APPARATUS FOR DETERMINING THE START POSITION AND POSTURE OF COMPENSATED LITHOGRAPHY AND A METHOD FOR DETERMINING A LITHOGRAPHY START POSITION AND A POSTURE IN MASKLESS LITHOGRAPHY

机译:用于确定补偿光刻术的起始位置和姿势的无影制版术设备以及确定无光刻术的光刻术的起始位置和构象的方法

摘要

PURPOSE: A maskless lithography apparatus a method for determining a lithography start position and a posture in maskless lithography are provided to fine a lithography start position and a posture and determine a comparison difference with a design nominal value by using a relative position difference and a relative posture difference.;CONSTITUTION: A substrate, on which any layer is patterned, is loaded on a transfer table(111). A pattern is exposed to a loaded substrate by using a maskless lithography. A mark position, which is patterned on the substrate and the mark position, which has a newly exposed pattern, are measured. A relative posture difference between a design lithography start posture and an actual posture is obtained by using a measured mark position. The relative position difference between the design lithography start position and an actual position is obtained by using the measured mark position. A compensated lithography start position and posture are determined by using the relative position difference and the relative posture difference.;COPYRIGHT KIPO 2012
机译:目的:提供一种无掩模光刻设备,一种用于确定无掩模光刻中的光刻开始位置和姿势的方法,以通过使用相对位置差和相对值来微调光刻开始位置和姿势并确定与设计标称值的比较差。构成:构成:将在其上构图了任何层的基板都放在传送台(111)上。通过使用无掩模光刻将图案暴露于加载的基板上。测量在基板上构图的标记位置和具有新曝光的图案的标记位置。通过使用测量的标记位置获得设计光刻开始姿势与实际姿势之间的相对姿势差。通过使用所测量的标记位置来获得设计光刻开始位置与实际位置之间的相对位置差。通过使用相对位置差和相对姿势差来确定补偿光刻的开始位置和姿势。; COPYRIGHT KIPO 2012

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