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MANUFACTURING METHOD OF POLYSILAZANE SOLUTION CAPABLE OF FORMING INSULATING LAYER HAVING EXCELLENT COATING CHARACTERISTICS TOGETHER WITH COMPACT SURFACE SHAPE, AND A POLYSILAZANE SOLUTION MANUFACTURED BY USING THE SAME
MANUFACTURING METHOD OF POLYSILAZANE SOLUTION CAPABLE OF FORMING INSULATING LAYER HAVING EXCELLENT COATING CHARACTERISTICS TOGETHER WITH COMPACT SURFACE SHAPE, AND A POLYSILAZANE SOLUTION MANUFACTURED BY USING THE SAME
PURPOSE: A manufacturing method of polysilazane solution is provided to reduce volume contraction ratio at converted to a silicon oxide layer because of low contraction ratio when used as a coating solution for filling semiconductor gap, thereby minimizing the generation of tensile stress, to restrain the generation of void and delamination.;CONSTITUTION: A manufacturing method of polysilazane solution comprise: a step of manufacturing mixed solution by mixing halosilane into a mixed solvent comprising inactive solvent and basic solvent; a step of manufacturing reactive solution by reacting ammonia added into the mixed solution and the halosilane; a step of manufacturing reaction filtrate by removing salt from the reactive solution. The manufacturing method additionally comprises a step of putting ammonia into after one step selected from the steps.;COPYRIGHT KIPO 2012
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