The present invention is to provide a VCSEL with mode control can be performed effectively by task . ; VCSEL (100) is of the p-type GaAs substrate 102 , GaAs substrate (102) formed on the lower portion of the p-type DBR (106) and is formed on the lower DBR (106), generating light which is formed on the active layer 112 , an active layer 112 , and selectively absorb or reflect the light of the oscillation wavelength , the optical mode control layer for controlling the mode of the laser light 120 and an optical mode control layer 120 has an upper DBR (124) formed on the .
展开▼