METHOD FOR PRODUCING THIN LEAD-FREE PEROVSKITE SODIUM BISMUTH TITANATE (NABITIO) FILMS WITH HIGH DIELECTRIC PROPERTIES

摘要

The invention relates to a process for producing thin lead-free perovskite sodium bismuth titanate NaBiTiO, (abbreviated NBT ) films with morphological, structural, optical and dielectrical characteristics compatible with the low frequency electronic applications based on the silicon technology, by using the pulsed laser deposition technique. According to the invention, the process consists in depositing thin sodium bismuth titanate, NaBiTiO, films onto a silicon target substrate metallized with a layer of platinum with a thickness of 100 nm by using the pulsed laser technique, wherefrom there results a coating of NBT/Pt/Si with a total thickness of 417.272 ± 3.57 nm, having a value of the forbidden band-width of 3.8 ± 0.05 eV, the values of the dielectric losses lower than 0.05 and the values of the dielectric permittivity of 1450 at 10 kHz.