method of measuring band gap and physical defect of target thin film using spectroscpic ellipsometry

摘要

one embodiment according to the spectroscopic ellipsometry using a target thin film layer of the band gap and the physical defect measuring method First, prepare the target material comprises a target thin film layer disposed on the substrate and the substrate. To obtain the target substance and the incident polarized light beam reflected from the target material ellipsometric measurements Lee methione ( , ) using the Ellipsometer. The measured value by performing modeling using a Cauchy function, and calculates the thickness of the target with respect to the thin film layer ( , ). The measure absorption coefficient is extracted by using a graph of the target thin film layer thickness of the removal of the calculated result and the target contribution of the thin film layer on the substrate ( , ). The absorption coefficient geuraepeugwa fitting model to determine the functions that can make the fitting (fitting). Comparing the fitted model function and the measured value ( , ) to determine the compliance with the fitting. ;