Infrared sensor pixel for infrared sensor array utilized in e.g. land based vehicle for pedestrian detection, has recess including vertical extension that is smaller than or equal to that of stop layers in substrate

摘要

The pixel (500) has a semiconductor substrate (1) i.e. silicon on insulator wafer, including a recess (14) on an active surface. An anchor structure is formed in the semiconductor substrate, and includes etching stop layers (11, 12). A hanging-up bar connects an acquisition structure with the anchor structure along an active surface of the semiconductor substrate. A vertical extension (D) of the recess in the semiconductor substrate is smaller than or equal to vertical extension of the etching stop layers in the semiconductor substrate. An independent claim is also included for a method for manufacturing an infrared sensor pixel.