首页> 外国专利> The substrate support organicity metal chemical compound restoration device for vapor phase growth, the organicity metal chemical compound for solid-state vapor phase growth is enclosed at manufacturing method of the substrate support organicity metal chemical compound for vapor phase growth and

The substrate support organicity metal chemical compound restoration device for vapor phase growth, the organicity metal chemical compound for solid-state vapor phase growth is enclosed at manufacturing method of the substrate support organicity metal chemical compound for vapor phase growth and

机译:用于气相生长的基板支撑有机金属化合物修复装置,用于气相生长的基板支撑有机金属化合物的制造方法封装了用于固态气相生长的有机金属化合物,并且

摘要

PROBLEM TO BE SOLVED: To provide: a carrier-supported organometallic compound for vapor-phase growth, capable of stably supplying an organometallic compound at a constant concentration for a long period without depending on the supplying device; a method for producing the same; and a carrier-supported organometallic compound filling device filled with the compound.;SOLUTION: The carrier-supported organometallic compound for vapor phase growth is produced by supporting an organometallic compound for vapor phase growth on a carrier being solid at ordinary temperature and inert to the organometallic compound, and then crushing the obtained carrier-supported organometallic compound. The carrier-supported organometallic compound does not contain a carrier-supported organometallic compound having a particle diameter of 0.84 mm.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供:用于气相生长的载体支撑的有机金属化合物,其能够在不依赖于供给装置的情况下长期稳定地以恒定浓度供给有机金属化合物;一种生产方法;溶液:用于气相生长的载体支撑的有机金属化合物是通过将用于气相生长的有机金属化合物支撑在常温下呈固态且对反应惰性的载体上而制得的有机金属化合物,然后将得到的载体担载的有机金属化合物粉碎。载体负载的有机金属化合物不含粒径<0.84 mm的载体负载的有机金属化合物。版权所有:(C)2008,JPO&INPIT

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