首页> 外国专利> The film forming method by laser ablation, laser ablation for the target and method of manufacturing the laser ablation for the target used in the way

The film forming method by laser ablation, laser ablation for the target and method of manufacturing the laser ablation for the target used in the way

机译:通过激光烧蚀的成膜方法,靶材的激光烧蚀以及以该方式使用的靶材的激光烧蚀的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing a thin film by laser ablation, in which the thin film can be deposited satisfactorily efficiently while suppressing the intrusion of a droplet satisfactorily.;SOLUTION: The method for depositing the thin film by laser ablation includes the steps of: irradiating a target 1 with laser beams to produce scattering particles (a); and sticking the scattering particles (a) onto the surface of a base material 5 to deposit the thin film on the surface of the base material. The target 1 includes a supporting substrate and a particle layer which is formed on the supporting substrate and composed of particles of an inorganic material. The average particle size of the particles of the inorganic material is 5 nm to 50 μm and the thickness of the particle layer is 1-200 μm.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种通过激光烧蚀沉积薄膜的方法,其中可以令人满意地有效地沉积薄膜,同时令人满意地抑制液滴的侵入。;解决方案:通过激光烧蚀沉积薄膜的方法包括以下步骤:用激光束照射靶1以产生散射颗粒(a);将散射粒子(a)粘贴在基材5的表面上,从而在基材的表面上沉积薄膜。靶1包括支撑衬底和形成在支撑衬底上并由无机材料的颗粒组成的颗粒层。无机材料的颗粒的平均粒径为5nm至50μm,并且颗粒层的厚度为1-200μm。;版权所有:(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP5435220B2

    专利类型

  • 公开/公告日2014-03-05

    原文格式PDF

  • 申请/专利权人 株式会社豊田中央研究所;

    申请/专利号JP20090219583

  • 发明设计人 武市 晃洋;東 博純;

    申请日2009-09-24

  • 分类号C23C14/28;

  • 国家 JP

  • 入库时间 2022-08-21 16:10:56

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