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VARIABLE RESISTANCE MEMORY DEVICE AND RELATED PROGRAMMING METHOD DESIGNED TO REDUCE PEAK CURRENT
VARIABLE RESISTANCE MEMORY DEVICE AND RELATED PROGRAMMING METHOD DESIGNED TO REDUCE PEAK CURRENT
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机译:旨在降低峰值电流的可变电阻存储器件及相关编程方法
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摘要
A method is provided for programming a nonvolatile memory device comprising a variable resistance memory cell connected to a bitline and a wordline. The method comprises precharging the bitline to a first bias voltage, precharging the wordline to a second bias voltage, wherein a voltage difference between the first bias voltage and the second bias voltage is less than a threshold voltage of the memory cell, and applying a first write voltage to the bitline and a second write voltage to the wordline in response to a select signal, wherein a voltage difference between the first write voltage and the second write voltage is greater than the threshold voltage.
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