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PROCESSES AND INTEGRATED SYSTEMS FOR ENGINEERING A SUBSTRATE SURFACE FOR METAL DEPOSITION

机译:用于金属沉积的基体表面工程的过程和集成系统

摘要

This embodiment electro-migration improves performance, provides a lower metal resistivity, copper interconnect for connection to a metal-to-metal or a silicon-to-metal to improve the metal surface adhesion-to-metal or a silicon-to provide a process and an integrated system to produce a metal surface. Copper on the copper surface in an integrated system to improve the electromigration performance of the interconnection cobalt - is an exemplary method is provided for making the surface of the substrate to selectively deposit a thin film of the alloy material. The method includes the step of conditioning the surface of the substrate by using the re-reducing environment and remove the contaminants from the metal oxide phase, and an integrated system for removing contaminants and metal oxides from the substrate surface in an integrated system. The method further includes a re-conditioning of the substrate surface and on the copper surface of the copper wiring in the integrated system, a cobalt-comprising the step of selectively depositing a thin layer of the alloy material. The system for performing the above-described exemplary method is also provided ; electro-migration, metal resistivity, copper interconnects, integrated system, a cobalt-alloy material
机译:该实施例的电迁移改善了性能,提供了较低的金属电阻率,铜互连,用于连接至金属对金属或硅对金属,从而改善了金属表面对金属或硅的粘附性,从而提供了一种工艺以及用于产生金属表面的集成系统。在集成系统中的铜表面上的铜可改善互连钴的电迁移性能-提供了一种示例性方法,用于使基板表面选择性地沉积合金材料薄膜。该方法包括以下步骤:通过使用还原环境来调节衬底的表面并从金属氧化物相去除污染物;以及集成系统,其在集成系统中用于从衬底表面去除污染物和金属氧化物。该方法还包括对集成系统中的基板表面和铜布线的铜表面上的再处理,包括钴的选择性沉积合金材料薄层的步骤。还提供了用于执行上述示例性方法的系统;电迁移,金属电阻率,铜互连,集成系统,钴合金材料

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