Raman scattering light enhancement device, a method of manufacturing of the Raman scattered light intensifier devices, as well as, Raman laser light source using the Raman scattered light intensifier devices

摘要

in the photo semiconductor substrate in holes (20a) are formed photonic crystal (20), a Raman scattered light enhancing device comprising a waveguide having a resonant mode at a plurality of frequencies with respect to the incident light, one with the frequency difference between the resonant modes and another resonant mode is equal to the Raman shift frequency of the semiconductor substrate, the Raman transition probabilities represented by the two electromagnetic field distributions and Raman tensor of the semiconductor substrate of the resonant modes There so a maximum, forming direction of the waveguide in the crystal orientation surface of the semiconductor substrate is set.