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Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions
Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions
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机译:Finfet器件,包括高迁移率沟道材料以及凹陷的源/漏区中具有渐变成分的材料
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摘要
A finFET device can include a high mobility semiconductor material in a fin structure that can provide a channel region for the finFET device. A source/drain recess can be adjacent to the fin structure and a graded composition epi-grown semiconductor alloy material, that includes a component of the high mobility semiconductor material, can be located in the source/drain recess.
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