- - METAL OXIDE THIN FILM METAL-SILICON OXIDE THIN FILM OR METAL-GERMANIUM OXIDE THIN FILM AND PREPARING METHOD THEREOF

摘要

The present invention relates to a metal oxide thin film, a metal-silicon oxide thin film, a metal precursor for depositing a metal-germanium oxide thin film, and a thin film deposition method using the same, and more particularly, A metal precursor compound used for depositing a metal oxide thin film, a metal-silicon oxide thin film, and a metal-germanium oxide thin film through a metal organic chemical vapor deposition (MOCVD) and an atomic layer deposition (ALD) .