MONOLITHIC INTEGRATION OF GALLIUM NITRIDE AND SILICON DEVICES AND CIRCUITS STRUCTURE AND METHOD

摘要

A structure and method for a semiconductor device includes a silicon device layer and a gallium nitride (GaN) device layer. In one embodiment, the silicon device layer and the GaN device layer have top surfaces that are coplanar with each other. In another embodiment, the GaN element layer is not directly under the silicon element layer, and the silicon element layer is not directly under the GaN element layer. The semiconductor device may further include a nitride-based semiconductor device within and / or within the silicon device layer and / or within the silicon-based semiconductor device and / or over the GaN device layer. The GaN element layer may comprise a plurality of layers, which may be formed as conformal blanket layers and then planarized or optionally formed and then planarized.