To obtain excellent film quality by properly controlling a flying direction of film deposition particles even when a magnetron is not used in a rotary cathode type plasma sputtering film deposition technique.SOLUTION: A film deposition apparatus 1 has a rotary cathode 51 arranged in a vacuum chamber 10, and a substrate S opposed to a surface of a target layer 512 in the vacuum chamber 10. A periphery of the target layer is covered with a shield member 58 which is in a cylindrical shape having an opening formed in an outer peripheral surface and also supported independently of the rotating target layer, and a part of the surface of the target layer is exposed to the substrate through the opening. High-frequency electric power is supplied to inductive coupling antennas 52, 53 having such a structure that linear conductors 521, 531 provided in the vacuum chamber and having less than one turn of winding are coated with dielectric layers 522, 532 so as to generate inductive coupling plasma in the space between the target layer having a negative potential and the substrate, and the target layer is sputtered with the inductive coupling plasma to deposit a film on the substrate.SELECTED DRAWING: Figure 4
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