首页>
外国专利>
METHOD OF FORMING A PATTERN USING ION BEAMS OF BILATERAL SYMMETRY METHOD OF FORMING A MAGNETIC MEMORY DEVICE USING THE SAME AND ION BEAM APPARATUS GENERATION ION BEAMS OF BILATERAL SYMMETRY
METHOD OF FORMING A PATTERN USING ION BEAMS OF BILATERAL SYMMETRY METHOD OF FORMING A MAGNETIC MEMORY DEVICE USING THE SAME AND ION BEAM APPARATUS GENERATION ION BEAMS OF BILATERAL SYMMETRY
展开▼
机译:利用双对称的离子束形成图形的方法利用同一个和离子束装置形成磁存储器件的方法产生对称的离子束
展开▼
页面导航
摘要
著录项
相似文献
摘要
The pattern forming method includes: forming a film to be etched on a substrate; providing a first ion beam irradiated with a first incident angle onto a surface of the film to be etched and a second ion beam irradiated with a second incident angle; and And patterning the etch target film using the first ion beam and the second ion beam to form patterns. Wherein the first ion beam and the second ion beam are symmetrical with respect to a normal normal to the upper surface of the substrate. Wherein each of the first incident angle and the second incident angle is smaller than an angle obtained by subtracting the first angle from 90 DEG with respect to the normal line, wherein the first angle is defined by the following equation (1). [Equation 1] alpha = arctan (B / A) Where A is the first angle, A is the spacing between the patterns, and B is the height of each of the patterns.
展开▼