A magnetic tunnel junction (MTJ) based sensor device includes a MTJ element and processing circuitry. The MTJ element includes a free layer, a pinned layer, and a tunnel barrier, the tunnel barrier being arranged above the pinned layer, wherein the free layer is adapted to flex away from the tunnel barrier during gyroscopic motion. The processing circuitry is configured to measure a resistance at the MTJ element and determine gyroscopic motion based on the resistance at the MTJ element.
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