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Domain wall-based spin MOSFET, domain wall-based analog memory, non-volatile logic circuit, and magnetic neuro element
Domain wall-based spin MOSFET, domain wall-based analog memory, non-volatile logic circuit, and magnetic neuro element
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机译:基于域壁的自旋MOSFET,基于域壁的模拟存储器,非易失性逻辑电路和磁性神经元
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摘要
A magnetic wall utilization spin MOSFET includes a magnetic wall driving layer including a magnetic wall, a first region, a second region, and a third region located between the first region and the second region, a channel layer, a magnetization free layer provided at a first end portion of a first surface of the channel layer, and arranged so as to be in contact with the third region of the magnetic wall driving layer, a magnetization fixed layer provided at a second end portion opposite to the first end portion, and a gate electrode provided between the first end portion and the second end portion of the channel layer through a gate insulating layer.
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