ALD CVD ALD/CVD PRECURSOR COMPOUND FOR ATOMIC LAYER DEPOSITIONALD CHEMICAL VAPOR DEPOSITIONCVDAND ALD/CVD DEPOSITION USING THE SAME

摘要

The present invention relates to a precursor compound, and more specifically, an atomic layer deposition method (Atomic Layer Deposition; ALD) or a chemical vapor deposition method (Chemical Vapor Deposition; CVD), a non-pyrophoric (Nonpyrophoric) precursor compound available for thin film deposition and ALD / CVD deposition method using the same.