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BTI and leakage aware dynamic voltage scaling for reliable low power cache memories

机译:BTI和泄漏感知动态电压调节,可靠的低功耗高速缓存存储器

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摘要

We propose a novel dynamic voltage scaling (DVS)approach for reliable and energy efficient cache memories. First, we demonstrate that, as memories age, leakage power reduction techniques become more effective due to sub-threshold current reduction with aging. Then, we provide an analytical model and a design exploration framework to evaluate trade-offs between leakage power and reliability, and propose a BTI and leakage aware selection of the “drowsy” state retention voltage for DVS of cache memories. We propose three DVS policies, allowing us to achieve different power/reliability trade-offs. Through SPICE simulations, we show that a critical charge and a static noise margin increase up to 150% and 34.7%, respectively, is achieved compared to standard aging unaware drowsy technique, with a limited leakage power increase during the very early lifetime, and with leakage energy saving up to 37% in 10 years of operation. These improvements are attained at zero or negligible area cost
机译:我们提出了一种新颖的动态电压缩放(DVS)方法,用于可靠且节能的高速缓存。首先,我们证明,随着存储器的老化,由于亚阈值电流随老化而降低,泄漏功率降低技术变得更加有效。然后,我们提供了一个分析模型和一个设计探索框架,以评估泄漏功率与可靠性之间的折衷,并提出了BTI和泄漏感知选择,以用于缓存存储器DVS的“困倦”状态保持电压。我们提出了三种DVS策略,使我们能够实现不同的功率/可靠性权衡。通过SPICE仿真,我们发现与标准的老化意识昏昏沉睡的技术相比,临界电荷和静态噪声容限分别提高了150%和34.7%,在非常短的使用寿命内,泄漏功率的增加有限,并且运作10年后,泄漏节能高达37%。这些改进以零成本或可忽略的面积成本实现

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