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A Dual-Band E-Band Quadrature VCO with Switched Coupled Transformers in 28nm HPM bulk CMOS

机译:具有28nm HPM体CMOS的带开关耦合变压器的双频带E频带正交VCO

摘要

This paper presents a quadrature VCO (QVCO) that employs gate-to-drain transformers to couple two fundamental oscillators to generate accurate quadrature phases and switched coupled inductors for tuning extension. Thanks to these techniques, it is possible to cover two bands with a single quadrature VCO, without jeopardizing phase noise or demanding extensive silicon area. The oscillator, realized in 28nm HPM bulk CMOS, occupies a core area of only 0.031mm2 and is tunable from 71-to-76GHz and 85.6-to-90.7GHz, resulting in a total tuning range of 9.8GHz. Thepeak phase noise at 10MHz offset from the carrier is -117.7dBc/Hz in the lower band and -110dBc/Hz in the higherone and varies less than 3.5dB within each sub-band. The maximum phase error is 1.5° and 3.5° in the lower and higher band respectively.
机译:本文介绍了一种正交VCO(QVCO),该器件采用栅漏变压器耦合两个基本振荡器以生成准确的正交相位,并使用开关耦合电感器进行调谐扩展。借助这些技术,可以用一个正交VCO覆盖两个频带,而不会危害相位噪声或要求较大的硅面积。该振荡器采用28nm HPM体CMOS制成,仅占0.031mm2的核心面积,并且可在71至76GHz和85.6至90.7GHz的频率范围内进行调谐,因此总调谐范围为9.8GHz。偏离载波10MHz时的峰值相位噪声在较低频段为-117.7dBc / Hz,在较高频段为-110dBc / Hz,并且在每个子频段内变化小于3.5dB。在较低和较高频带中,最大相位误差分别为1.5°和3.5°。

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