An Investigation of Deep Impurity Levels in GaAs by Photocapacitance and Related Techniques.

摘要

The purpose of this research program was to investigate the behavior and identity of impurities in high quality liquid phase epitaxial GaAs. Photocapacitance measurements were combined with photoluminescence and other well established techniques to provide a complete electrical characterization of the material. In order to identify possible impurities, similar characterizations were carried out on epitaxial GaAs with Cu impurity added either during layer growth or by diffusion after growth, and on bulk crystals of GaAs doped with chromium and oxygen. (Author)