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Reverse-contact UV nanoimprint lithography for multilayered structure fabrication

机译:用于多层结构制造的反向接触UV纳米压印光刻

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摘要

In this paper, we report results on a newly developed nanofabrication technique, namely reverse-contact UV nanoimprint lithography. This technique is a combination of nanoimprint lithography and contact printing lithography. In this process, a lift-off resist and a UV cross-linkable polymer are spin-coated successively onto a patterned UV mask-mould. These thin polymer films are then transferred from the mould to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light. After separation of the mould and the substrate, the unexposed polymer areas are dissolved in a developer solution leaving behind the negative features of the original stamp. This method delivers resist pattern transfer without a residual layer, thereby rending unnecessary the etching steps typically needed in the imprint lithography techniques for three-dimensional patterning. Three-dimensional woodpile-like structures were successfully fabricated with this new technique.
机译:在本文中,我们报告了最新开发的纳米制造技术的结果,即反向接触UV纳米压印光刻。该技术是纳米压印光刻和接触印刷光刻的组合。在该方法中,将抗剥离抗蚀剂和可UV交联的聚合物依次旋涂在图案化的UV掩模模具上。然后通过在合适的温度和压力下接触,将这些聚合物薄膜从模具转移到基材上。然后将整个组件暴露在紫外线下。在模具和基底分离之后,未曝光的聚合物区域溶解在显影剂溶液中,留下原始印模的负面特征。该方法在没有残留层的情况下提供抗蚀剂图案转移,从而不必要地进行了用于三维图案化的压印光刻技术中通常需要的蚀刻步骤。这项新技术成功地制造了三维木桩状结构。

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