Effect of microwave annealing temperatures on lead zirconate titanate thin films

摘要

Lead zirconate titanate (Pb_(1.1)(Zr_(0.52)Ti_(0.48))O_3) thin films of thickness 260 nm on Pt/Ti/SiO_2/Si substrates were densified by 2.45 GHz microwave annealing. The PZT thin films were annealed at various annealing temperatures from 400 to 700 deg C for 30 min. X-ray diffraction showed that the pyrochlore phase was transformed to the perovskite phase at 450 deg C and the film was fully crystallized. The secondary (again pyrochlore) phase was observed in the PZT thin films, which were annealed above 550 deg C. The surface morphologies were changed above 550 deg C of the PZT thin films due to the secondary phase. Higher dielectric constant (epsilon_r) and lower dielectric loss coercive field (E_c) were achieved for the 450 deg C film than for the other annealed films.