A metallization and bonding approach for high performance carbon nanotube thermal interface materials

摘要

A method has been developed to create vertically aligned carbon nanotube (VACNT) thermal interface materials that can be attached to a variety of metallized surfaces. VACNT films were grown on Si substrates using standard CVD processing followed by metallization using Ti/Au. The coated CNTs were then bonded to metallized substrates at 220 °C. By reducing the adhesion of the VACNTs to the growth substrate during synthesis, the CNTs can be completely transferred from the Si growth substrate and used as a die attachment material for electronic components. Thermal resistance measurements using a photoacoustic technique showed thermal resistances as low as 1.7 mm~2 KW ~(-1) for bonded VACNT films 25-30 μm in length and 10 mm~2 KW~(-1) for CNTs up to 130 μm in length. Tensile testing demonstrated a die attachment strength of 40 N cm~(-2) at room temperature. Overall, these metallized and bonded VACNT films demonstrate properties which are promising for next-generation thermal interface material applications.