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STEM-EELS analysis reveals stable highdensity He in nanopores of amorphous silicon coatings deposited by magnetron sputtering

机译:STEM-EELS分析揭示了磁控溅射沉积的非晶硅涂层纳米孔中稳定的高密度氦

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摘要

A broad interest has been showed recently on the study of nanostructuring of thin films and surfaces obtained by low-energy He plasma treatments and He incorporation via magnetron sputtering. In this paper spatially resolved electron energy-loss spectroscopy in a scanning transmission electron microscope is used to locate and characterize the He state in nanoporous amorphous silicon coatings deposited by magnetron sputtering. A dedicated MATLAB program was developed to quantify the helium density inside individual pores based on the energy position shift or peak intensity of the He K-edge. A good agreement was observed between the high density (similar to 35-60 at nm(-3)) and pressure (0.3-1.0 GPa) values obtained in nanoscale analysis and the values derived from macroscopic measurements (the composition obtained by proton backscattering spectroscopy coupled to the macroscopic porosity estimated from ellipsometry). This work provides new insights into these novel porous coatings, providing evidence of high-density He located inside the pores and validating the methodology applied here to characterize the formation of pores filled with the helium process gas during deposition. A similar stabilization of condensed He bubbles has been previously demonstrated by high-energy He ion implantation in metals and is newly demonstrated here using a widely employed methodology, magnetron sputtering, for achieving coatings with a high density of homogeneously distributed pores and He storage capacities as high as 21 at.
机译:最近,人们对通过低能氦等离子体处理和通过磁控溅射掺入获得的薄膜和表面的纳米结构的研究表现出了广泛的兴趣。本文采用扫描透射电子显微镜中的空间分辨电子能量损失谱对磁控溅射沉积的纳米多孔非晶硅涂层中的He态进行定位和表征。开发了一个专用的MATLAB程序,根据氦K边的能量位置偏移或峰值强度来量化单个孔内的氦密度。在纳米级分析中获得的高密度(类似于nm(-3)处的35-60)和压力(0.3-1.0 GPa)值与宏观测量得出的值(质子背散射光谱获得的成分与椭圆偏振法估计的宏观孔隙率)之间有很好的一致性。这项工作为这些新型多孔涂层提供了新的见解,提供了位于孔隙内的高密度氦的证据,并验证了这里应用于表征沉积过程中充满氦工艺气体的孔隙形成的方法。凝聚氦气泡的类似稳定性先前已通过金属中的高能氦离子注入得到证明,并且在这里使用广泛采用的方法磁控溅射新展示了该方法,以实现具有高密度均匀分布孔隙和氦存储容量高达21 at%的涂层。

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