Monte Carlo simulations of nanoscale focused neon ion beam sputtering of copper: elucidating resolution limits and sub-surface damage

摘要

A three dimensional Monte Carlo simulation program was developed to model physical sputtering and to emulate vias nanomachined by the gas field ion microscope. Experimental and simulation results of focused neon ion beam induced sputtering of copper are presented and compared to previously published experiments. The simulation elucidates the nanostructure evolution during the physical sputtering of high aspect ratio nanoscale features. Quantitative information such as the energy-dependent sputtering yields, dose dependent aspect ratios, and resolution-limiting effects are discussed. Furthermore, the nuclear energy loss and implant concentration beneath the etch front is correlated with the sub-surface damage revealed by transmission electron microscopy at different beam energies.