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Storage of Electrical Information in Metal-Organic-Framework Memristors

机译:金属有机框架忆阻器中电信息的存储

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Single crystals of a cyclodextrin-based metal-organic framework (MOF) infused with an ionic electrolyte and flanked by silver electrodes act as memristors. They can be electrically switched between low and high conductivity states that persist even in the absence of an applied voltage. In this way, these small blocks ofnanoporous sugar function as a nonvolatile RRAM memory elements that can be repeatedly read, erased, and re-written. These properties derive from ionic current within the MOF and the deposition of nanometer-thin passivating layers at the anode flanking the MOF crystal. The observed phenomena are crucially dependent on the sub-nanometer widths of the channels in the MOF, allowing the passage of only smaller ions. Conversely, with the electrolyte present but no MOF, there are no memristance or memory effects.
机译:注入离子电解质并两侧有银电极的环糊精基金属有机框架 (MOF) 的单晶充当忆阻器。它们可以在低电导率和高电导率状态之间进行电气切换,即使在没有施加电压的情况下也能持续存在。通过这种方式,这些纳米多孔糖的小块充当非易失性RRAM存储元件,可以重复读取、擦除和重写。这些特性源于MOF内部的离子电流和MOF晶体两侧阳极处纳米薄钝化层的沉积。观察到的现象在很大程度上取决于MOF中通道的亚纳米宽度,只允许较小的离子通过。相反,当电解质存在但没有MOF时,没有记忆或记忆效应。

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