Low-Temperature Atomic Layer Deposition of Copper Metal Thin Films: Self-Limiting Surface Reaction of Copper Dimethylamino-2-propoxide with Diethylzinc

摘要

Copper has been of great interest as a conducting material to replace aluminum in device manufacturing, because of its good conductivity and superior resistance to electromigration and stress migration compared with aluminum.In addition, copper has good thermal stability and a low temperature coefficient of resistance.Typically, copper films have been prepared by using electrodeposition, physical vapor deposition (PVD), and chemical vapor deposition (CVD).