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首页> 外文期刊>International Journal of Quantum Chemistry >STRUCTURE AND BONDING ANISOTROPY IN INTERGROWTH OXIDES: A CLUE TO THE MANIFESTATION OF BIDIMENSIONALITY IN T-, T'-, AND T*-TYPE STRUCTURES
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STRUCTURE AND BONDING ANISOTROPY IN INTERGROWTH OXIDES: A CLUE TO THE MANIFESTATION OF BIDIMENSIONALITY IN T-, T'-, AND T*-TYPE STRUCTURES

机译:共生氧化物中的结构和键合各向异性:证明T型,T'型和T *型结构的二维性的线索

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摘要

The manifestation of bidimensionality in T-, T'-, and T*-type structures of A2BO4 oxides occurs in terms of cooperative structure-bonding properties involving both the metal-O A(B)-O bonds and the A-A cationic repulsions. The analysis of the A-metal network gives evidence of ninefold cationic coordination very similar to the ninefold O coordination. The short A-A apical distance results in A-A repulsions which are able to balance the A-O apical overbonding. In La2NiO4 as compared to La2CuO4, the contribution of these repulsions is more important (dA-A=3.25 angstroms in La2NiO4; 3.66 angstroms in La2CuO4). The perovskite (P)/rock salt (RS) intergrowth, T-type structure, due to strong geometrical constraint, has excess anisotropy which needs to be relieved. In contrast, the perovskite (P)/calcium fluoride (CF), T'-type structure, is nearly free from any excess anisotropy to be relieved. In the (P)/(RS)/(P)/(CF) intergrowth, T*-type structure, owing to a more regular distribution of the A-O bonds, the excess anisotropy is further restricted. Crystal chemical mechanisms such as A substitutions and the oxidation of Cu, which lower the excess charge in the anionic and cationic (P) and (RS) slabs, respp. , do not operate. The useful role of controlled excess structure-bonding anisotropy is emphasized. 30 refs.
机译:A2BO4氧化物的T-,T'-和T *型结构中的二维性是根据涉及金属-O A(B)-O键和A-A阳离子排斥力的协同结构键合性质而出现的。 A-金属网络的分析提供了九倍阳离子配位的证据,与九倍O配位非常相似。短的A-A顶端距离会导致A-A排斥,从而可以平衡A-O顶端过度粘结。与La2CuO4相比,在La2NiO4中,这些斥力的贡献更为重要(La2NiO4中的dA-A = 3.25埃; La2CuO4中的3.66埃)。钙钛矿(P)/盐(RS)共生的T型结构由于强烈的几何约束而具有过量的各向异性,需要缓解。相反,钙钛矿(P)/氟化钙(CF)是T'型结构,几乎没有多余的各向异性可以消除。在(P)/(RS)/(P)/(CF)共生T *型结构中,由于A-O键的分布更规则,所以进一步限制了各向异性。晶体化学机理(例如A取代和Cu的氧化)降低了阴离子和阳离子(P)和(RS)平板中的过量电荷。 ,请勿操作。强调了控制过量结构键各向异性的有用作用。 30个参考

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