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首页> 外文期刊>International Journal of Quantum Chemistry >Intrinsic Band Gap Shift in Ti Silicalites Modified by V Ion Implantation:Ab Initio and Density Functional Theory Study
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Intrinsic Band Gap Shift in Ti Silicalites Modified by V Ion Implantation:Ab Initio and Density Functional Theory Study

机译:离子注入改性钛硅质岩的内在能带隙位移:Ab从头算和密度泛函理论研究

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摘要

Ab initio and density functional theory quantum chemical calculations show that both the tetrahedrally coordianted V ions and highly dispersed titanium oxide species in the V ion-implanted Ti silicalites have the tendency to lcoate in next-neighboring ositions viathe formation of a Ti-O-V linkage.The latter was found to play an importnat role in modifying the electronic nature ofthe Ti silicalite photocatalysts to enable the absorption band to shift to longer wavelength regions.
机译:从头算和密度泛函理论的量子化学计算表明,注入V离子的Ti硅质岩中的四面体坐标系的V离子和高度分散的二氧化钛物种都倾向于通过形成Ti-OV键而在邻位振荡。发现后者在改变钛硅沸石光催化剂的电子性质中起重要作用,以使吸收带转移到更长的波长区域。

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