Power‐gain andfmaxequations based on theTequivalent circuit of high‐frequency bipolar transistors

摘要

AbstractAnalytical expressions for the maximum available power gain and fmaxof a high‐frequency bipolar transistor are derived from the simple T equivalent circuit model of bipolar transistors. These equations predict the power gain of the state‐of‐the‐art microwave bipolar transistor very well and show that f/maxand power gain are proportional to the transconductance and decrease as the resistance‐capacitance charging time and current gain delay time increase. © 1994 John Wiley