A 0.13 formula formulatype='inline' img src='/images/tex/508.gif' alt='mu{hbox {m}}' /formula SiGe BiCMOS Technology Featuring fformula formulatype='inline' img src='/images/tex/18209.gif' alt='_{T} ' /formula/fformula formulatype='inline' img src='/images/tex/18210.gif' alt='_{max }' /formula of 240/330 GHz and Gate Delays Below 3 ps

摘要

A 0.13 $mu{hbox {m}}$ SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies $f _{T}$ of 240 GHz, maximum oscillation frequencies $f _{max}$ of 330 GHz, and breakdown voltages ${rm BV}_{rm CEO}$ of 1.7 V along with high-voltage HBTs ($f _{T} =50~{hbox {GHz}}$, $f _{max} =130~{hbox {GHz}}$, ${rm BV}_{rm CEO} =3.7~{hbox{V}}$) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.