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High resolution electron beam fabrication: a brief review of experimental studies that began at Cambridge University in 1962

机译:高分辨率电子束制造:1962年在剑桥大学开始的实验研究的简要回顾

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SUMMARYElectron beam fabrication studies with the scanning electron microscope began at Cambridge University in 1962. Early experiments demonstrated that structures could be made that were smaller than could be made by other methods, but it was not until several years later at IBM Research that useful devices with these smaller dimensions were made. It was even later (1981) before the resolution limits of electron beam lithography with conventional resist were measured. It is now understood that with conventional resists, electron/resist interaction effects limit the minimum structure size to about 10 nm. Newer methods that involve the direct sublimation of materials such as NaCl and LiF allow structures down to about 1 nm to be made.
机译:摘要1962年,剑桥大学开始使用扫描电子显微镜进行电子束制造研究。早期的实验表明,可以制造出比其他方法更小的结构,但直到几年后,IBM研究院才制造出具有这些较小尺寸的有用设备。甚至更晚(1981 年)才测量出使用传统光刻胶进行电子束光刻的分辨率极限。现在人们了解到,对于传统的光刻胶,电子/光刻胶相互作用效应将最小结构尺寸限制在10nm左右。涉及直接升华 NaCl 和 LiF 等材料的较新方法允许制造低至 1 nm 的结构。

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