In Situ Synthesis of Two-Dimensional Lateral Semiconducting-Mo:Se//Metallic-Mo Junctions Using Controlled Diffusion of Se for High-Performance Large-Scaled Memristor

摘要

Two-dimensional (2D) materials are favorable candidates for resistive memories in high-density nanoelec-tronics owing to their ultrathin scaling and controllable interfacial characteristics. However, high processing temper-atures and difficulties in mechanical transfer are intriguing challenges associated with their implementation in large areas with crossbar architecture. A high processing temperature may damage the electrical functionalities of the bottom electrode, and mechanical transfer of 2D materials may introduce undesirable microscopic defects and macroscopic discontinu-ities. In this study, an in situ fabrication of an electrode and 2D-molybdenum diselenide (MoSe2) is reported. The controlled diffusion of selenium (Se) in the predeposited molybdenum (Mo) produces Mo//Mo:Se stacks with a few layers of MoSe2 on top and MoSex on the bottom. Diffusion-assisted Mo//Mo:Se fabrication is observed over a large area (4 in. wafer). Additionally, a 5 x 5 array of crossbar memristors (Mo//Mo:Se//Ag) is fabricated using the diffusion of Se in patterned Mo. These memristors exhibit a small switching voltage (similar to 1.1 V), high endurance (>250 cycles), and excellent retention (>15 000 s) with minimum cycle-to-cycle and device-to-device variation. Thus, the proposed nondestructive in situ technique not only simplifies the fabrication but also minimizes the number of required stages.