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Electron thermal internal transport barriers triggered by the effect of ion shielding

机译:Electron thermal internal transport barriers triggered by the effect of ion shielding

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Abstract The formation of electron thermal internal transport barriers (eITBs) is investigated by critical gradient threshold analysis for recent EAST experiments with dominant RF heating and low torque injection. The ratio of electron temperature to ion temperature, τ = T e/T i, is identified to be the key parameter that triggers eITB in the hot electron mode through electron turbulence suppression by the effect of ion shielding. The critical gradient of electron-temperature-gradient turbulence can be greatly increased with τ due to strong electron heating and weak electron–ion energy coupling. The formation and evolution of eITB is found to be determined by the critical temperature gradient of electron turbulence.

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