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机译:Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation
TU Darmstadt;
CEA, LETI, Univ. Grenoble Alpes;
Center Nanoelectronic Technologies (CNT)GSI Helmholtzzentrum fuer SchwerionenforschungCEA, LETI;
ferroelectric random-access memory; hafnium oxide; phase-change memory; phase transitions; resistive random-access memory; swift heavy ions; 4D-scanning transmission electron microscopy; automated crystal orientation mapping;