A top-down fabrication process for a-IGZO thin film transistor and patterned organic light-emitting diode

摘要

A top-down fabrication process that can simultaneously implement an amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) and an organic light-emitting diode (OLED) device has been studied. The proposed process utilizing self-aligned imprint lithography (SAIL) is simple because it does not require any repetitive alignment and coating steps in the photolithography process for the TFT fabrication. This study reports that a single a-IGZO TFT and OLED device can be fabricated in a top-down manner using the SAIL process. These two devices were fabricated using only imprint lithography and plasma etching processes without any photholithography process, and they were confirmed to operate normally. Although these two devices were studied separately in this report, simultaneous top-down fabrication of an active-matrix OLED pixel composed of a-IGZO TFT and OLED connected together is also possible in principle. The proposed SAIL process is a very easy way to fabricate active-matrix OLED displays, and it can be utilized as an efficient display fabrication process if the few issues mentioned in this study are solved.