Christoph T. Koch - Department of Physics IRIS Adlershof, Humboldt-Universitat zu Berlin, 10099 Berlin, Germany; ? orcid.org/0000-0002-3984-1523

摘要

Indium nitride (InN) has been of significant interest for creating and studying two-dimensional electron gases (2DEG). Herein we demonstrate the formation of 2DEGs in ultrathin doped and undoped 2D InN nanosheets featuring high carrier mobilities at room temperature. The synthesis is carried out via a two-step liquid metal-based printing method followed by a microwave plasma-enhanced nitridation reaction. Ultrathin InN nanosheets with a thickness of similar to 2 +/- 0.2 nm were isolated over large areas with lateral dimensions exceeding centimeter scale. Room temperature Hall effect measurements reveal carrier mobilities of similar to 216 and similar to 148 cm2 V-1 s-1 for undoped and doped InN, respectively. Further analysis suggests the presence of defined quantized states in these ultrathin nitride nanosheets that can be attributed to a 2D electron gas forming due to strong out-of-plane confinement. Overall, the combination of electronic and plasmonic features in undoped and doped ultrathin 2D InN holds promise for creating advanced optoelectronic devices and functional 2D heterostructures.