Strongly anisotropic ultrafast dynamic behavior of GaTe dominated by the tilted and flat bands

摘要

The anisotropic transport properties of gallium telluride (GaTe) have been reported by several experiments, giving rise to many debates recently. The anisotropic electronic band structure of GaTe shows the extreme difference between the flat band and tilted band in two distinct directions, (G) -(X) and (G) -(Y), and which we called as the mixed flat-tilted band (MFTB). Focusing on such two directions, the relaxation of photo-generated carriers has been studied using the non-adiabatic molecular dynamics (NAMD) method to investigate the anisotropic behavior of ultrafast dynamics. The results show that the relaxation lifetime is different in flat band direction and tilted band direction, which is evidence for the existence of anisotropic behavior of the ultrafast dynamic, and such anisotropic behavior comes from the different intensities of electron- phonon coupling of the flat band and tilted band. Furthermore, the ultrafast dynamic behavior is found to be affected strongly by spin-orbit coupling (SOC) and such anisotropic behavior of the ultrafast dynamic can be reversed by SOC. The tunable anisotropic ultrafast dynamic behavior of GaTe is expected to be detected in ultrafast spectroscopy experiments and it may provide a tunable application in nanodevice design. The results may also provide a reference for the investigation of MFTB semiconductors.