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机译:Insights on the variability of Cu filament formation in the SiO2 electrolyte of quantized-conductance conductive bridge random access memory devices
Helmholtz Zent Berlin Materialien & Energie;
Free Univ Berlin;
CBRAM; quantum conductance; SiO2; stochasticity; neuromorphic computing; analytical model; electrochemical metallization cell (ECM); RESISTIVE MEMORY; DYNAMICS; OXYGEN;