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机译:A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate
Samsung Elect Co Ltd, Memory Business, Flash Prod & Technol, Suwon 445330, Gyeonggi Do, South Korea;
1 Gb/s data rate; 3D vertical-NAND flash; dynamic bandwidth control scheme; good endurance; high performance; high speed program; low energy; read latency; resistance monitor; simple state selection; WL overdrive;