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机译:“合金化”二维氮化镓(GaN)和氮化铝(ALN)之后的异常高导电性
Nanjing Univ Jiangsu Key Lab Artificial Funct Mat Coll Engn &
Appl Sci Natl Lab Solid State Microstruct Nanjing 210093 Peoples R China;
Hunan Univ Coll Mech &
Vehicle Engn State Key Lab Adv Design &
Mfg Vehicle Body Changsha 410082 Peoples R China;
Changsha Univ Sci &
Technol Sch Mat Sci &
Engn Changsha 410004 Peoples R China;
Zhengzhou Univ Sch Phys &
Microelect Zhengzhou 450001 Peoples R China;
Hunan Univ Coll Mech &
Vehicle Engn State Key Lab Adv Design &
Mfg Vehicle Body Changsha 410082 Peoples R China;
Nanjing Univ Jiangsu Key Lab Artificial Funct Mat Coll Engn &
Appl Sci Natl Lab Solid State Microstruct Nanjing 210093 Peoples R China;
Univ South Carolina Dept Mech Engn Columbia SC 29208 USA;
thermal transport; alloy; isolated optical phonon branch; electronic bonding; first-principles;
机译:HVPE工艺生长的氮化镓(GaN)晶体的高导热率
机译:单层六边形氮化物(H-ALN)的本质上低晶格导热系数来自第一原理:与石墨烯的比较研究
机译:氮化铝-乙二醇(AlN-EG)纳米流体的粘度,导热性和导电性的实验研究
机译:多模氮化镓/氮化铝(GaN / ALN)异质结构串谐振器的温度依赖性
机译:氮化铝-碳化硅合金,氮化铝和氮化dium块状晶体的升华生长以及氮化铝的热氧化。
机译:聚酰亚胺改性的氮化铝填料在具有增强的导热性的AlN @ PI /环氧树脂复合材料中用于电子封装
机译:多晶氮化铝(alN)陶瓷的导热系数多晶氮化铝(alN)陶瓷的导热系数
机译:成长氮化铝(alN)衬底上氮化铝镓((al)GaN)薄膜缺陷的控制。