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首页> 外文期刊>Nanotechnology >Tuning the electronic properties of highly anisotropic 2D dangling-bond-free sheets from 1D V2Se9 chain structures
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Tuning the electronic properties of highly anisotropic 2D dangling-bond-free sheets from 1D V2Se9 chain structures

机译:从1D V2Se9链结构调整高端各向异性2D悬空 - 无粘合片材的电子性质

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摘要

True one-dimensional (1D) van der Waals materials can form two-dimensional (2D) dangling-bond-free anisotropic surfaces. Dangling bonds on surfaces act as defects for transporting charge carriers. In this study, we consider true 1D materials to be V2Se9 chains, and then the electronic structures of 2D sheets composed of true 1D V2Se9 chains are calculated. The (010) plane has indirect bandgap with 0.757 eV (1.768 eV), while the (111x305;) plane shows a nearly direct bandgap of 1.047 eV (2.118 eV) for DFT-D3 (HSE06) correction, respectively. The (111x305;) plane of V2Se9 is expected to be used in optoelectronic devices because it contains a nearly direct bandgap. Partial charge analysis indicates that the (010) plane exhibits interchain interaction is stronger than the (111x305;) plane. To investigate the strain effect, we increased the interchain distance of planes until an indirect-to-direct bandgap transition occurred. The (010) plane then demonstrated a direct bandgap when interchain distance increased by 30%, while the (111x305;) plane demonstrated a direct bandgap when the interchain distance increased by 10%. In mechanical sensors, this change in the bandgap was induced by the interchain distance.
机译:真正的一维范德华材料可以形成二维悬垂无键各向异性表面。表面上悬垂的键作为电荷载流子传输的缺陷。在本研究中,我们考虑真正的一维材料为V2Se9链,然后计算由真1D V2Se9链组成的2D片材的电子结构。(010)平面的间接带隙为0.757eV(1.768eV),而(111x305;)平面显示DFT-D3(HSE06)校正的近直接带隙分别为1.047 eV(2.118 eV)。(111x305;)V2Se9的平面有望用于光电子器件,因为它包含几乎直接的带隙。部分电荷分析表明,(010)面表现出的链间相互作用强于(111x305;)飞机为了研究应变效应,我们增加了平面的链间距离,直到间接到直接的带隙转变发生。当链间距增加30%时,(010)面显示出直接带隙,而(111x305;)当链间距增加10%时,平面显示出直接带隙。在机械传感器中,这种带隙变化是由链间距离引起的。

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