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机译:MG水平对P-AlGaN孔源层晶格弛豫的影响,试图UVB发射器P-AlGaN HSL上的准分子激光退火
RIKEN Cluster Pioneering Res CPR 2-1 Hirosawa Wako Saitama 3510198 Japan;
Nara Inst Sci &
Technol Div Mat Sci 8916-5 Takayama Ikoma Nara 6300192 Japan;
Nara Inst Sci &
Technol Div Mat Sci 8916-5 Takayama Ikoma Nara 6300192 Japan;
Kyushu Univ Dept Gigaphoton Next GLP Nishi Ku 744 Motooka Fukuoka 8190395 Japan;
RIKEN Cluster Pioneering Res CPR 2-1 Hirosawa Wako Saitama 3510198 Japan;
Marubun Corp Chuo Ku Tokyo 1098577 Japan;
Marubun Corp Chuo Ku Tokyo 1098577 Japan;
RIKEN Cluster Pioneering Res CPR 2-1 Hirosawa Wako Saitama 3510198 Japan;
RIKEN Cluster Pioneering Res CPR 2-1 Hirosawa Wako Saitama 3510198 Japan;
RIKEN Cluster Pioneering Res CPR 2-1 Hirosawa Wako Saitama 3510198 Japan;
p-AlGaN hole source layer; UVB LEDs; UVB LDs; excimer laser annealing; Mg activation; coherent structure; resistivity;
机译:使用Al组成分级P-AlGaN包层覆盖UVB激光二极管结构中的光限制和高电流密度
机译:使用Al成分渐变的p-AlGaN覆盖层的UVB激光二极管结构中的光限制和高电流密度
机译:用分级P-AlGaN空穴注入层提高AlGaN紫外-b发光二极管的效率
机译:镁浓度和准分子激光退火(ELA)对基于AlGaN的UVB激光二极管应用的p-AlGaN包覆层的影响
机译:在基于AlGaN的深紫外发光二极管的p-AlGaN / n-AlGaN / p-AlGaN电流扩散层上
机译:在基于AlGaN的深度紫外发光二极管的P-AlGaN / N-AlGaN / P-AlGaN电流扩散层