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Bandwidth-tunable THz absorber based on diagonally distributed double-sized VO2 disks

机译:基于对角分布的双尺寸VO2磁盘的带宽可调THz吸收器

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摘要

Terahertz absorbers combined with phase-changing VO2 are a class of stealth materials with adjustable absorptance. However, such absorbers still suffer from insufficient absorption bandwidth. We propose a three-layer terahertz (THz) absorber, consisting of an array of diagonally distributed double-sizedVO(2) disks on a silica-coated gold film. We find this structure can generate the superposition of three resonant absorption peaks to broaden the absorption band. The finite element simulation (FES) results show that the absorption bandwidth can be adjusted from 2.63 to 5.04 THz by simply changing the sizes of the VO2 disks. In addition, the peak absorptance can be continuously regulated from 9.8% to 96% by varying the conductivity of VO2. Finally, the absorber is polarizationinsensitive and has wide-angle absorption. The wide absorption band and adjustable bandwidth of the absorbers have important applications potentially for intelligent stealth materials. (C) 2021 Optical Society of America
机译:太赫兹吸收材料与相变VO2相结合是一种吸收率可调的隐身材料。然而,这种吸收器仍然存在吸收带宽不足的问题。我们提出了一种三层太赫兹(THz)吸收体,由一系列对角分布的双尺寸VO(2)盘组成,盘位于一层涂有二氧化硅的金膜上。我们发现这种结构可以产生三个共振吸收峰的叠加,从而拓宽吸收带。有限元模拟(FES)结果表明,只要改变VO2盘的尺寸,吸收带宽就可以从2.63太赫兹调整到5.04太赫兹。此外,通过改变VO2的电导率,峰值吸收率可以从9.8%持续调节到96%。最后,吸收体对偏振不敏感,具有广角吸收。吸收材料的宽吸收带和可调带宽在智能隐身材料中有着潜在的重要应用。(2021)美国光学学会

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  • 来源
    《Applied optics》 |2021年第11期|共9页
  • 作者单位

    Tianjin Univ Sch Microelect Tianjin 300072 Peoples R China;

    Tianjin Univ Sch Microelect Tianjin 300072 Peoples R China;

    City Univ Hong Kong Dept Mat Sci &

    Engn 83 Tat Chee Ave Hong Kong 999077 Peoples R China;

    Tianjin Univ Sch Microelect Tianjin 300072 Peoples R China;

    Tianjin Univ Sch Microelect Tianjin 300072 Peoples R China;

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  • 正文语种 eng
  • 中图分类 应用;
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